HAF2021 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel MOSFET Series Power Switching

HAF2021(L), HAF2021(S)
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V 8 V
Pulse Test
80
6V
60
40
20
4V
V_GS = 3.5 V
0
2
4
6
8 10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.8
Pulse Test
0.6
I_D = 50 A
0.4
25 A
0.2
10 A
0
2
4
6
8 10
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
500
Thermal shut down Operation Area
200
100
50
20
10
5
2
1
Operation in
is limited by
DC
PW
Operatio=n
this area
R_DS(on)
1 _ms100 ^µs
10 _ms
(Tc _{= 25°C)}
0.5 Ta = 25°C
0.3 _{0.5 1 2 5 10 20 50 100}
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
Tc = -25°C
20
25°C
75°C
10
0
2
4
6
8
Gate to Source Voltage V_GS (V)
Static Drain to Source State Resistance
vs. Drain Current
50
20
10
V_GS = 6 V
V_GS = 10 V
5
2
Pulse Test
1
1 2 5 10 20
Drain Current I_D
50 100 200
(A)
Rev.2.00, Mar.05.2004, page 4 of 8