HAF2021 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Silicon N Channel MOSFET Series Power Switching

HAF2021(L), HAF2021(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Symbol
V_DSS
V_GSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
Pch ^Note2
Tch
Tstg
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
T_sd
V_OP
Min
3.5
—
—
—
—
—
—
—
3.5
Typ
—
—
—
—
—
0.6
0.35
175
—
Ratings
60
16
–2.5
50
100
50
100
150
–55 to +150
Max
Unit
—
V
1.2
V
100
µA
50
µA
1
µA
—
mA
—
mA
—
°C
12
V
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Test Conditions
Vi = 6 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Vi = 1.2 V, V_DS = 0
Vi = 6 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Channel temperature
Rev.2.00, Mar.05.2004, page 2 of 8