HAF2021 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Silicon N Channel MOSFET Series Power Switching

HAF2021(L), HAF2021(S)
Electrical Characteristics
Item
Symbol Min Typ Max Unit
Drain current
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
I_D1
I_D2
V_(BR)DSS
V_(BR)GSS
V_(BR)GSS
I_GSS1
I_GSS2
I_GSS3
I_GSS4
I_GS(op)1
I_GS(op)2
I_DSS
V_GS(off)
|y_fs|
R_DS(on)
90
—
60
16
–2.5
—
—
—
—
—
—
—
2.2
15
—
—
—
—
—
—
—
—
—
—
0.6
0.35
—
—
50
8
—
A
10
mA
—
V
—
V
—
V
100 µA
50
µA
1
µA
–100 µA
—
mA
—
mA
10
µA
3.4
V
—
S
12
mΩ
Static drain to source on state
resistance
R_DS(on)
—
9.5
15
mΩ
Output capacitance
Coss —
1450 —
pF
Turn-on delay time
t_d(on)
—
20
—
µs
Rise time
t_r
—
75
—
µs
Turn-off delay time
t_d(off)
—
3
—
µs
Fall time
t_f
—
2.6
—
µs
Body–drain diode forward voltage V_DF
—
0.9
—
V
Body–drain diode reverse
t_rr
—
110 —
ns
recovery time
Over load shut down
operation time ^Note4
t_os
—
0.8
—
ms
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = 6 V, V_DS = 10 V
V_GS = 1.2 V, V_DS = 10 V
I_D = 10 mA, V_GS = 0
I_G = 300 µA, V_DS = 0
I_G = –100 µA, V_DS = 0
V_GS = 6 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_GS = 1.2 V, V_DS = 0
V_GS = –2.4 V, V_DS = 0
V_GS = 6 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_DS = 60 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 25 A, V_DS = 10 V ^Note3
I_D = 25 A, V_GS = 10 V ^Note3
I_D = 25 A, V_GS = 6 V ^Note3
V_DS = 10 V , V_GS = 0, f = 1 MHz
I_D = 25 A, V_GS = 10 V
R_L = 1.2 Ω
I_F = 50 A, V_GS = 0
I_F = 50 A, V_GS = 0
diF/ dt =50 A/µs
V_GS = 6 V, V_DD = 16 V
Rev.2.00, Mar.05.2004, page 3 of 8