M16C62 Datasheet, PDF (193/231 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description
Mitsubishi microcomputers
M16C / 62 Group (80-pin)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Outline Performance
Table 1.21.1 shows the outline performance of the M16C/62 (80-pin flash memory version) and Table
1.21.2 shows the power supply current (Typ.).
Table 1.21.1. Outline Performance of the M16C/62 (flash memory version)
Item
Power supply voltage
Performance
5V version: 2.7V to 5.5 V
(f(XIN)=16MHz, without wait, 4.2V to 5.5V,
f(XIN)=10MHz, with one wait, 2.7V to 5.5V)
3V version: 2.4V to 3.6 V
(f(XIN)=10MHz, without wait, 2.7V to 3.6V,
f(XIN)=7MHz, without wait, 2.4V to 3.6V)
Program/erase voltage
Flash memory operation mode
5V version: 4.2V to 5.5 V
(f(XIN)=12.5MHz, with one wait,
f(XIN)=6.25MHz, without wait)
3V version: 2.7V to 3.6 V
(f(XIN)=10MHz, with one wait,
f(XIN)=6.25MHz, without wait)
Three modes (parallel I/O, standard serial I/O, CPU rewrite)
Erase block
division
User ROM area
Boot ROM area
See Figure 1.21.1
One division (8 Kbytes) (Note 1)
Program method
In units of pages (in units of 256 bytes)
Erase method
Program/erase control method
Collective erase/block erase
Program/erase control by software command
Protect method
Protected for each block by lock bit
Number of commands
8 commands
Program/erase count
100 times
ROM code protect
Parallel I/O and standard serial modes are supported.
3V version main clock input
oscillation frequency(Max.)
(Note2)
3V version power supply
current (Notes 3, 4)
10MHz (VCC=2.7V to 3.6V,without wait)
10 X VCC - 17 MHz (VCC=2.4V to 2.7V,without wait)
12.0mA(Typ.), 21.25mA(Max.) (VCC=3V, f(XIN)=10MHz, square wave, no division, without wait)
40µA(Typ.) (VCC=3V, f(XCIN)=32kHz, square wave, without wait) [operate in RAM]
700µA(Typ.) (VCC=3V, f(XCIN)=32kHz, square wave, without wait) [operate in flash memory]
Note1: The boot ROM area contains a standard serial I/O mode control program which is stored in it when shipped from the factory.
This area can be erased and programmed in only parallel I/O mode.
Note2: Refer to recommended operating conditions about 5 V version. 3V version relationship between main clock oscillation
frequency and supply voltage are as follows.
Main clock input oscillation frequency
(flash memory 3V version, without wait)
10.0
10 X VCC - 17MHZ
7.0
0.0
2.4
2.7
3.6
Supply voltage[V] (BCLK: no division)
Note3: Refer to electric characteristic about 5V version.
Note4: A standard value in stop and wait modes do not depend on a kind of memory to have built-in and is the same class. Refer to
electric characteristic in VCC=3V.
Table 1.21.2. Power supply current (typ.) of the M16C/62 (80-pin flash memory version)
Parameter
Measuring condition
5V power supply current(5V version) f(XIN)=16MHz, without wait, No division
3V power supply current(5V version) f(XIN)=10MHz, with wait, No division
3V power supply current(3V version) f(XIN)=10MHz, without wait, No division
Standard (Typ.)
Read
35mA
Program
28mA
Erase
25mA
13.5mA
-
-
12mA
17mA
14mA
Remark
Division by 4 in program/erase
Division by 2 in program/erase
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