HYS72T512422HFN Datasheet, PDF (4/41 Pages) Qimonda AG – 240-Pin Fully-Buffered DDR2 SDRAM Modules

Internet Data Sheet
HYS72T512[4/5]22HFN–[3S/3.7]–A
240-Pin Fully-Buffered DDR2 SDRAM Modules
1.2
Description
This document describes the electrical and mechanical
features of Qimonda’s 240-pin, PC2-4200F, PC2-5300F ECC
type, Fully Buffered Double-Data-Rate Two Synchronous
DRAM Dual In-Line Memory Modules (DDR2 SDRAM FB-
DIMMs). Fully Buffered DIMMs use commodity DRAMs
isolated from the memory channel behind a buffer on the
DIMM. They are intended for use as main memory when
installed in systems such as servers and workstations. PC2-
4200, PC2-5300 refers to the DIMM naming convention
indicating the DDR2 SDRAMs running at 266, 333 MHz clock
speed and offering 4200, 5300 MB/s peak bandwidth. FB-
DIMM features a novel architecture including the Advanced
Memory Buffer. This single chip component, located in the
center of each DIMM, acts as a repeater and buffer for all
signals and commands which are exchanged between the
host controller and the DDR2 SDRAMs including data in- and
output. The AMB communicates with the host controller and /
or the adjacent DIMMs on a system board using an Industry
Standard High-Speed Differential Point-to-Point Link
Interface at 1.5 V.
The Advanced Memory Buffer also allows buffering of
memory traffic to support large memory capacities. All
memory control for the DRAM resides in the host, including
memory request initiation, timing, refresh, scrubbing, sparing,
configuration access, and power management. The
Advanced Memory Buffer interface is responsible for handling
channel and memory requests to and from the local DIMM
and for forwarding requests to other DIMMs on the memory
channel. Fully Buffered DIMM provides a high memory
bandwidth, large capacity channel solution that has a narrow
host interface. The maximum memory capacity is 288 DDR2
SDRAM devices per channel or 8 DIMMs.
Product Type¹⁾
TABLE 2
Ordering Information (Pb-free components and assembly)
Compliance Code²⁾
Description
SDRAM Technology
PC2-4200F (DDR2-533):
HYS72T512422HFN–3.7–A 4GB 2R×4 PC2-4200F–444–11–D
2 Ranks, FB–DIMM 2Gbit (×4)
HYS72T512522HFN–3.7–A 4GB 2R×4 PC2-4200F–444–11–D
2 Ranks, FB–DIMM 2Gbit (×4)
PC2-5300F (DDR2-667):
HYS72T512422HFN–3S–A 4GB 2R×4 PC2-4200F–444–11–D
2 Ranks, FB–DIMM 2Gbit (×4)
HYS72T512522HFN–3S–A 4GB 2R×4 PC2-4200F–444–11–D
2 Ranks, FB–DIMM 2Gbit (×4)
1) All product types end with a place code, designating the silicon die revision. Example: HYS 72T64000HFA-3.7-A, indicating Rev. A dice
are used for DDR2 SDRAM components. To learn more on QIMONDA DDR2 module and component nomenclature see section 8 of this
datasheet.
2) The Compliance Code is printed on the module label and describes the speed grade, e.g. “PC2-4200F-444-11-A”, where 4200F means
Fully Buffered DIMM with 4.26 GB/sec. Module Bandwidth and “444-11” means CAS latency = 4, t_rcd latency = 4 and t_rp latency = 4 using
JEDEC SPD Revision 1.1 and assembled on Raw Card “A”.
DIMM
Density
4 GB
Module
Organization
512M ×72
Memory
Ranks
2
ECC/
Non-ECC
ECC
# of
SDRAMs
18
TABLE 3
Address Format
# of row/bank/columns bits
Raw
Card
13/2/11
D
Rev. 1.3, 2006-12
4
03292006-QQ89-IKE4