HYB39S512400AT Datasheet, PDF (4/21 Pages) Infineon Technologies AG – 512-Mbit Synchronous DRAM

Internet Data Sheet
HY[I/B]39S512[40/80/16]0A[E/T]
512-Mbit Synchronous DRAM
1.2
Description
The HY[I/B]39S512[40/80/16]0A[E/T] are four bank Synchronous DRAM’s organized as 4 banks × 32MBit ×4, 4
banks × 16MBit ×8 and 4 banks × 8Mbit ×16 respectively. These synchronous devices achieve high speed data transfer
rates for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to
a system clock. The chip is fabricated with Qimonda advanced 0.14 µm 512-MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and
mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally
supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is
possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and
speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply.
All 512-Mbit components are available in P(G)-TSOPII-54 packages.
Product Type
Speed Grade
Standard Operating Temperature (0 °C - +70 °C)
HYB39S512400AT-7.5
PC133-333-520
HYB39S512800AT-7.5
HYB39S512160AT-7.5
HYB39S512400AE-7.5
HYB39S512800AE-7.5
HYB39S512160AE-7.5
TABLE 2
Ordering Information for RoHS Compliant Products
Description
Package
Note
133MHz 4B × 32M × 4 SDRAM P-TSOPII-54
133MHz 4B × 16M × 8 SDRAM
133MHz 4B × 8M × 16 SDRAM
133MHz 4B × 32M × 4 SDRAM PG-TSOPII-54
1)
133MHz 4B × 16M × 8 SDRAM
133MHz 4B × 8M × 16 SDRAM
Industrial Operating Temperature (–40 °C - +85 °C)
HYI39S512400AT-7.5
PC133-333-520
133MHz 4B × 32M × 4 SDRAM P-TSOPII-54
HYI39S512800AT-7.5
133MHz 4B × 16M × 8 SDRAM
HYI39S512160AT-7.5
133MHz 4B × 8M × 16 SDRAM
HYI39S512400AE-7.5
133MHz 4B × 32M × 4 SDRAM PG-TSOPII-54
1)
HYI39S512800AE-7.5
133MHz 4B × 16M × 8 SDRAM
HYI39S512160AE-7.5
133MHz 4B × 8M × 16 SDRAM
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.52, 2007-06
4
03292006-6Y91-0T2Z