HYB39S512400AT Datasheet, PDF (14/21 Pages) Infineon Technologies AG – 512-Mbit Synchronous DRAM

Internet Data Sheet
HY[I/B]39S512[40/80/16]0A[E/T]
512-Mbit Synchronous DRAM
Parameter
Operating Current
Precharge Standby Current
No Operating Current
Burst Operating Current
Auto Refresh Current
Self Refresh Current
One bank active, Burst length = 1
Power down mode
Non-power down mode
Active state (max. 4 banks)
Read command cycling
Auto Refresh command cycling
Self Refresh Mode, CKE=0.2 V, t_CK=infinity
TABLE 10
I_DD Conditions
Symbol
I_DD1
I_DD2P
I_DD2N
I_DD3N
I_DD3P
I_DD4
I_DD5
I_DD6
Symbol
I_DD1
I_DD2P
I_DD2N
I_DD3N
I_DD3P
I_DD4
I_DD5
I_DD6
Test Condition
t_RC = t_RC(min), I_O = 0 mA
CS =V_{IH (min.)}, CKE ≤V_IL(max)
CS =V_{IH (min.)}, CKE≥ V_IH(min)
CS = V_IH(min), CKE ≥V_IH(min.)
CS = V_IH(min), CKE ≤ V_IL(max.)
t_RFC= t_RFC(min)
t_RFC= 15.6 µs
–7.5
Typ.
123
0.6
23
26
2
97
255
—
2.1
TABLE 11
I_DD Specifications and Conditions
Unit
Note ¹⁾
Max.
145
mA
2)3)
3
mA
2)
31
mA
2)
35
mA
2)
4
mA
2)
123
mA
2)3)
300
mA
4)
—
mA
—
4
mA
—
1) T_A = 0 to 70 °C for HYB.., T_A = -40 to 85 °C for i-temp part (HYI..); V_SS = 0 V, V_DD, V_DDQ = +3.3 V ± 0.3 V
2) These parameters depend on the cycle rate. All values are measured at 133 MHz for “-7.5” components with the outputs open. Input
signals are changed once during t_ck .
3) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is assumed and
the V_DDQ current is excluded.
4) t_RFC= t_RFC(min) “burst refresh”, t_RFC= 15.6 µs “distributed refresh”.
Rev. 1.52, 2007-06
14
03292006-6Y91-0T2Z