HYB25D512400C Datasheet, PDF (3/37 Pages) Qimonda AG – DDR SDRAM

Internet Data Sheet
1
Overview
HYB25D512[400/160/800]C[E/T/F/C](L)
512-Mbit Double-Data-Rate SDRAM
This chapter gives an overview of the 512-Mbit Double-Data-Rate SDRAM product family and describes its main
characteristics.
1.1
Features
• Double data rate architecture: two data transfers per clock
cycle
• Bidirectional data strobe (DQS) is transmitted and
received with data, to be used in capturing data at the
receiver
• DQS is edge-aligned with data for reads and is center-
aligned with data for writes
• Differential clock inputs (CK and CK)
• Four internal banks for concurrent operation
• Data mask (DM) for write data
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data and
data mask referenced to both edges of DQS
• Burst Lengths: 2, 4, or 8
• CAS Latency: 2, 2.5, 3
• Auto Precharge option for each burst access
• Auto Refresh and Self Refresh Modes
• RAS-lockout supported t_RAP=t_RCD
• 7.8 µs Maximum Average Periodic Refresh Interval
• 2.5 V (SSTL_2 compatible) I/O
• V_DDQ = 2.5 V ± 0.2 V
• V_DD = 2.5 V ± 0.2 V
• P-TFBGA-60-11 package
• P-TSOPII-66-1 package
• RoHS Compliant Products¹⁾
Part Number Speed Code
Speed Grade
Max. Clock Frequency
Component
@CL3
@CL2.5
@CL2
f_CK3
f_CK2.5
f_CK2
–5
DDR400B
200
166
133
TABLE 1
Performance for –5 and –6
–6
Unit
DDR333B
166
166
133
—
MHz
MHz
MHz
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.31, 2006-09
3
03292006-3TFJ-HNV3