HYB25D512400C Datasheet, PDF (23/37 Pages) Qimonda AG – DDR SDRAM

Internet Data Sheet
HYB25D512[400/160/800]C[E/T/F/C](L)
512-Mbit Double-Data-Rate SDRAM
4
Electrical Characteristics
This chapter describes the electrical characteristics.
4.1
Operating Conditions
This chapter contains the operating conditions.
Parameter
Voltage on I/O pins relative to V_SS
Voltage on inputs relative to V_SS
Voltage on V_DD supply relative to V_SS
Voltage on V_DDQ supply relative to V_SS
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
Symbol
V_IN, V_OUT
V_IN
V_DD
V_DDQ
T_A
T_STG
PD
I_OUT
min.
–0.5
–1
–1
–1
0
-55
—
—
TABLE 16
Absolute Maximum Ratings
Values
typ. max.
Unit Note/ Test
Condition
— V_DDQ + 0.5
V
— +3.6
V
— +3.6
V
— +3.6
V
— +70
°C
— +150
°C
1
—
W
50 —
mA
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This is a stress
rating only, and functional operation should be restricted to recommended operation conditions. Exposure
to absolute maximum rating conditions for extended periods of time may affect device reliability and
exceeding only one of the values may cause irreversible damage to the integrated circuit.
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
Parameter
Symbol
Input Capacitance: CK, CK
C_I1
Delta Input Capacitance
C_dI1
Input Capacitance: All other input-only pins C_I2
Delta Input Capacitance: All other input-only C_dIO
pins
TABLE 17
Input and Output Capacitances
Min.
Values
Unit
Typ. Max.
Note/
Test Condition
2.0
—
1.5
—
—
—
1.5
—
2.0
—
—
—
3.0
pF
2.5
pF
0.25 pF
2.5
pF
3.0
pF
0.5
pF
TSOPII¹⁾
TFBGA ¹⁾
1)
TFBGA ¹⁾
TSOPII ¹⁾
1)
Rev. 1.31, 2006-09
23
03292006-3TFJ-HNV3