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HYB18M256320CF Datasheet, PDF (3/26 Pages) Qimonda AG – DRAMs for Mobile Applications | |||
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1
Overview
Internet Data Sheet
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
1.1
Features
⢠Organization:
â 4 banks à 4 Mbit à 16, 1 KB page size
â 4 banks à 2 Mbit à 32, 2 KB page size
⢠Double-data-rate architecture: two data transfers per clock cycle
⢠Bidirectional data strobe (DQS) is transmitted / received with data; to be used in capturing data at the receiver
⢠DQS is edge-aligned with data for READs and center-aligned with data for WRITEs
⢠Differential clock input (CK / CK)
⢠Commands entered on positive CK edge; data and mask data are referenced to both edges of DQS
⢠Four internal banks for concurrent operation
⢠Programmable CAS latency: 2 and 3
⢠Programmable burst length: 2, 4, 8, 16 and full page
⢠Programmable drive strength: full, 1/2, 1/4 and 1/8
⢠Auto refresh and self refresh modes
⢠Refresh cycles:
â 8192 refresh cycles / 64ms (x16)
â 4096 refresh cycles / 64ms (x32)
⢠Auto precharge
⢠Commercial (-0°C to +70°C) and Extended (-25°C to +85°C) operating temperature ranges
⢠Package:
â x16: 60âball PG-VFBGA-60-4 10.0 Ã 10.5 Ã 1.0 mm
â x32: 90âball PG-VFBGA-60-3 10.0 Ã 12.5 Ã 1.0 mm
⢠RoHS Compliant Products1)
Power Saving Features
⢠Low supply voltages: VDD = 1.70 V â 1.95 V, VDDQ = 1.70 V â 1.95 V
⢠Optimized operating (IDD0, IDD4), self refresh (IDD6) and standby currents (IDD2, IDD3)
⢠DDR I/O scheme with no DLL
⢠Programmable Partial Array Self Refresh (PASR)
⢠Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
⢠Clock Stop, Power-Down and Deep Power-Down modes
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev.1.44, 2007-07
3
06262007-JK8G-48BV
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