HYB18M256320CF Datasheet, PDF (15/26 Pages) Qimonda AG – DRAMs for Mobile Applications

Internet Data Sheet
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
Parameter
Symbol
TABLE 10
Electrical Characteristics
Values
Unit Note¹⁾²⁾
Min. Max.
Power Supply Voltage
V_DD
1.70
1.95
V
–
Power Supply Voltage for DQ Output Buffer
V_DDQ
1.70
1.95
V
–
Input leakage current
I_IL
-1.0
1.0
μΑ –
Output leakage current
I_OL
-1.0
1.0
μA –
Address and Command Inputs (BA, BA1, CKE, CS, RAS, CAS, WE)
Input high voltage
Input low voltage
Clock Inputs (CK, CK)
V_IH
0.8 × V_DDQ V_DDQ + 0.3 V
–
V_IL
-0.3
0.2 × V_DDQ V
–
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential cross point voltage
Data Inputs (DQ, DM, DQS)
V_IN
-0.3
V_DDQ + 0.3 V
–
V_ID(DC)
0.4 × V_DDQ V_DDQ + 0.6 V
3)
V_ID(AC)
0.6 × V_DDQ V_DDQ + 0.6 V
3)
V_IX
0.4 × V_DDQ 0.6 × V_DDQ V
4)
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data Outputs (DQ, DQS)
V_IHD(DC)
0.7 × V_DDQ V_DDQ + 0.3 V
–
V_ILD(DC)
-0.3
0.3 x V_DDQ V
–
V_IHD(AC)
0.8 × V_DDQ V_DDQ + 0.3 V
–
V_ILD(AC)
-0.3
0.2 × V_DDQ V
–
Output high voltage (I_OH = -0.1 mA)
V_OH
0.9 × V_DDQ –
V
–
Output low voltage (I_OL = 0.1 mA)
V_OL
–
0.1 × V_DDQ V
–
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25°C ≤ T_C ≤ 85 °C (ext.)All voltages referenced to V_SS. V_SS and V_SSQ must be at same potential.
2) See Table 12 and Figure 4 for overshoot and undershoot definition.
3) V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
4) The value of V_IX is expected to be equal to 0.5 x V_DDQ and must track variations in the DC level.
Rev.1.44, 2007-07
15
06262007-JK8G-48BV