HYB18M256320CF Datasheet, PDF (20/26 Pages) Qimonda AG – DRAMs for Mobile Applications

Internet Data Sheet
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
Parameter & Test Conditions
Symbol
Values
–6
– 7.5
Unit Note
1)2)3)4)5)
Self refresh current:
I_DD6
See Table 14
μA
CKE is LOW; CK = LOW, CK = HIGH; address and control inputs are
STABLE; data bus inputs are STABLE
Deep Power Down current
I_DD8
10
10
μA ⁶⁾
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25°C ≤ T_C ≤ 85 °C (ext.); V_DD = 1.70 V - 1.95 V, V_DDQ = 1.70 V - 1.95 V.Recommended Operating Conditions
unless otherwise noted
2) IDD specifications are tested after the device is properly initialized and measured at 133 MHz for -7.5 speed grade, and 166 MHz for -6
speed grade.
3) Input slew rate is 1.0 V/ns.
4) Definitions for I_DD:LOW is defined as VIN ≤ 0.1 * VDDQ;HIGH is defined as VIN ≥ 0.9 * VDDQ;STABLE is defined as inputs stable at a
HIGH or LOW level;SWITCHING is defined as:- address and command: inputs changing between HIGH and LOW once per two clock
cycles;- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE
5) All parameters are measured with no output loads.
6) Value shown as typical and measured at 25 °C.
Parameter & Test Conditions
Max. Temperature
Symbol
TABLE 14
Self Refresh Currents
Values
Units Note
Typ. Max.
Self refresh mode,
Full array (PASR = 000)
85 °C
40 °C
I_DD6
275 400 μA
1)2)
145 –
Self refresh mode,
Half array (PASR = 001)
85 °C
40 °C
210 340
115 –
Self refresh mode,
Quarter array (PASR = 010)
85 °C
40 °C
185 310
100 –
1) -25 °C ≤ T_J ≤ 85 °C (ext.); V_DD = V_DDQ = 1.70V to 1.95V
2) For commercial temperature range part (HYB), the max value indicated for 85 °C applies to 70 °C
Rev.1.44, 2007-07
20
06262007-JK8G-48BV