HYB18M256320CF Datasheet, PDF (14/26 Pages) Qimonda AG – DRAMs for Mobile Applications

Internet Data Sheet
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
3
Electrical Characteristics
3.1
Operating Conditions
Parameter
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
Extended
Symbol
V_DD
V_DDQ
V_IN
V_OUT
T_C
T_STG
P_D
I_OUT
TABLE 8
Absolute Maximum Ratings
Values
Unit Note
Min.
-0.3
-0.3
-0.3
-0.3
-25°
-55
–
–
Max.
2.7
V–
2.7
V–
V_DDQ + 0.3 V –
V_DDQ + 0.3 V –
+85
°C –
+150
°C –
0.7
W–
50
mA –
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
Parameter
Symbol
TABLE 9
Pin Capacitances
Values
Min.
Max.
Unit Note¹⁾
2)3)
Input capacitance: CK, CK
C_I1
2.5
5.0
pF –
Input capacitance: all other input-only pins
C_I2
1.5
3.5
pF –
Input/output capacitance: DQ, DQS, DM
C_IO
2.0
4.5
pF –
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer. V_DD, V_DDQ are
applied and all other pins (except the pin under test) are floating. DQ’s should be in high impedance state. This may be achieved by pulling
CKE to low level.
3) Although DM is an input-only pin, it’s input capacitance models the input capacitance of the DQ and DQS pins.
Rev.1.44, 2007-07
14
06262007-JK8G-48BV