HYB18L512320BF-7.5 Datasheet, PDF (3/23 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM

1
Overview
Internet Data Sheet
HY[B/E]18L512320BF-7.5
512-Mbit Mobile-RAM
1.1
Features
• 4 banks × 4 Mbit × 32 organization (dual-die)
• Fully synchronous to positive clock edge
• Four internal banks for concurrent operation
• Programmable CAS latency: 2, 3
• Programmable burst length: 1, 2, 4, 8 or full page
• Programmable wrap sequence: sequential or interleaved
• Programmable drive strength: full, 1/2, 1/4 and 1/8
• Auto refresh and self refresh modes
• Refresh cycles:
– 8192 refresh cycles / 64 ms
• Auto precharge
• Commercial (-0°C to +70°C) and Extended (-25°C to +85°C) operating temperature range
• Package:
– Dual-Die 90-ball PG-TFBGA package (13.0 × 8.0 × 1.2 mm)
• RoHS Compliant Products¹⁾
Power Saving Features
• Low supply voltages: V_DD = 1.70 V to 1.95 V, V_DDQ = 1.70 V to 1.95 V
• Optimized self refresh (I_DD6) and standby currents (I_DD2 / I_DD3)
• Programmable Partial Array Self Refresh (PASR)
• Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
• Power-Down and Deep Power Down modes
Part Number Speed Code
Speed Grade
Access Time (t_ACmax)
Clock Cycle Time (t_CKmin)
CL = 2 or 3
CL = 3
CL = 2
- 7.5
133
6.5
7.5
9.5
TABLE 1
Performance
Unit
MHz
ns
ns
ns
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev.1.22, 2007-08
3
03292006-D7GM-ZBSS