HYB18L512320BF-7.5 Datasheet, PDF (17/23 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM

Internet Data Sheet
HY[B/E]18L512320BF-7.5
512-Mbit Mobile-RAM
Parameter & Test Conditions
Max.
Symbol
Temperature
Values
TABLE 15
Self Refresh Currents
Units Notes¹⁾²⁾
Typ.
Max.
Self Refresh Current:
Self refresh mode, full array
activation(PASR = 000)
85 °C
70 °C
45 °C
I_DD6
1020
680
450
1200
–
–
μA
–
25 °C
410
–
Self Refresh Current:
Self refresh mode, half array
activation(PASR = 001)
85 °C
70 °C
45 °C
800
940
570
–
400
–
25 °C
360
–
Self Refresh Current:
Self refresh mode, quarter array
activation(PASR = 010)
85 °C
70 °C
45 °C
680
800
500
–
370
–
25 °C
340
–
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.); V_DD = V_DDQ = 1.70 V to 1.95 V
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual temperature with a much
finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for TCSR. At production test the sensor is
calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained from device characterization.
Rev.1.22, 2007-08
17
03292006-D7GM-ZBSS