HYB18L512320BF-7.5 Datasheet, PDF (14/23 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM

Internet Data Sheet
HY[B/E]18L512320BF-7.5
512-Mbit Mobile-RAM
Parameter
Symbol
Values
TABLE 12
Electrical Characteristics
Unit
Notes¹⁾
Min.
Max.
Power Supply Voltage
V_DD
1.70
1.95
V
–
Power Supply Voltage for DQ Output Buffer V_DDQ
1.70
1.95
V
–
Input high voltage
V_IH
0.8 × V_DDQ
V_DDQ + 0.3
V
2)
Input low voltage
V_IL
-0.3
0.3
V
2)
Output high voltage
V_OH
V_DDQ - 0.2
–
V
–
Output low voltage
V_OL
–
0.2
V
–
Input leakage current
I_IL
-1.0
1.0
μΑ
–
Output leakage current
I_OL
-1.5
1.5
μA
–
1) 0 ⎦C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.); All voltages referenced to V_SS. V_SS and V_SSQ must be at same potential.
2) V_IH may overshoot to V_DD + 0.8 V for pulse width < 4 ns; V_IL may undershoot to -0.8 V for pulse width < 4 ns.Pulse width measured at 50%
with amplitude measured between peak voltage and DC reference level.
3.2
AC Characteristics
Parameter
Clock cycle time
CL = 2
CL = 3
Clock frequency
CL = 2
CL = 3
Access time from CLK
Clock high-level width
Clock low-level width
Address, data and command input setup time
Address, data and command input hold time
MODE REGISTER SET command period
DQ low-impedance time from CLK
DQ high-impedance time from CLK
Data out hold time
DQM to DQ High-Z delay (READ Commands)
DQM write mask latency
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Rev.1.22, 2007-08
03292006-D7GM-ZBSS
Symbol
- 7.5
t_CK
f_CK
t_AC
t_CH
t_CL
t_IS
t_IH
t_MRD
t_LZ
t_HZ
t_OH
t_DQZ
t_DQW
t_RC
t_RCD
Min.
9.5
7.5
—
—
—
2.5
2.5
1.5
0.8
2
1.0
3.0
2.5
—
0
67
19
Max.
—
—
105
133
6.5
—
—
—
—
—
—
7.0
—
2
—
—
—
TABLE 13
AC Characteristics
Unit Notes^1)2)3)4)
ns —
ns
MHz —
MHz
ns
5)6)
ns —
ns —
ns
7)
ns
7)
t_CK
—
ns —
ns —
ns
5)6)
t_CK
—
t_CK
—
ns
8)
ns
8)
14