HYB18H256321BF Datasheet, PDF (27/41 Pages) Qimonda AG – 256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM

Internet Data Sheet
HYB18H256321BF
256-Mbit GDDR3
Voltage (V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
Pull-Down Current (mA)
Minimum
2.32
4.56
6.69
8.74
10.70
12.56
14.34
16.01
17.61
19.11
20.53
21.92
23.29
24.65
26.00
27.35
28.70
30.08
—
—
Maximum
3.04
5.98
8.82
11.56
14.19
16.72
19.14
21.44
23.61
26.10
28.45
30.45
32.73
34.95
37.10
39.15
41.01
42.53
43.71
44.89
TABLE 14
Programmed Driver IV Characteristics at 40 Ohm
Pull-Up Current (mA)
Minimum
-2.44
-4.79
-7.03
-9.18
-11.23
-13.17
-15.01
-16.74
-18.37
-19.90
.21.34
-22.72
-24.07
-25.40
-26.73
-28.06
-29.37
-30.66
—
—
Maximum
-3.27
-6.42
-9.45
-12.37
-15.17
-17.83
-20.37
-22.78
-25.04
-27.17
-29.17
-31.25
-33.00
-35.00
-37.00
-39.14
-41.25
-43.29
-45.23
-47.07
4.7.2
Termination IV Characteristic at 60 Ohms
Figure 15 represents the DQ termination Pull-Up IV characteristic under process, voltage and temperature best and worst case
conditions. The actual DQ termination Pull-Up current must lie between these two bounding curves. The value of the external
ZQ resistor is 240 Ω, setting the nominal DQ termination impedance to 60 Ω. (Extended Mode Register programmed to ZQ/4).
Rev. 0.80, 2007-09
27
09132007-07EM-7OYI