|
HYS72T512420EFA Datasheet, PDF (16/37 Pages) Qimonda AG – 240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products | |||
|
◁ |
Internet Data Sheet
HYS72T512420EFAâ[25F/3S]âC
Fully-Buffered DDR2 SDRAM Modules
4
Electrical Characteristics
This chapter describes the electrical characteristics.
4.1
Operating Conditions
This chapter describes the operating conditions.
Parameter
Symbol
TABLE 8
Absolute Maximum Ratings
Rating
Unit Notes
Min. Max.
Voltage on any SMbus interface signal pin relative to VSS
VIN, VOUT
â0.5 +4.00 V
1)
Voltage on VDD pin relative to VSS
VDD
â0.5 +2.4
V
2)
Voltage on VCC pin relative to VSS
VCC
â0,3 +1.75 V
â
Voltage on VDDQ pin relative to VSS
VDDQ
â0.5 +2.3
V
2)3)
Voltage on VDDL pin relative to VSS
VDDL
â0.5 +2.3
V
2)3)
Voltage on any pin relative to VSS
VIN, VOUT
â0.3 +1.75 V
2)
Voltage on VTT pin relative to VSS
VTT
â0.5 +2.3
V
â
Storage Temperature
TSTG
â55 +100
°C
2)3)
1) Stresses greater than those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
3) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol Values
TABLE 9
Operating Temperature Range
Unit Note
Min Max
Junction Temperature
TJ
0
DRAM Component Case Temperature Range TCASE 0
AMB Component Case Temperature Range
0
115 °C 1)2)
95
°C 3)4)
111 °C 1)2)
1) Stresses greater than those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2) Within the DRAM Component Case temperature range all DRAM specifications will be supported.
Rev.1.20, 2007-10-19
16
03202007-06NE-DYYI
|
▷ |