HYS64T128020EDL Datasheet, PDF (13/43 Pages) Qimonda AG – 200-Pin Small-Outlined DDR2 SDRAM Modules

Internet Data Sheet
HYS64T128020EDL–[2.5/3S/3.7]–B
Small Outlined DDR2 SDRAM Modules
Symbol
Parameter
TABLE 10
DRAM Component Operating Temperature Range
Rating
Unit
Note
Min.
Max.
T_CASE
Operating Temperature
0
95
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C the Auto-Refresh command interval has to be reduced to t_REFI= 3.9 µs
4) When operating this product in the 85 °C to 95 °C T_CASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of I_DD6 by approximately 50%
3.2
DC Operating Conditions
Parameter
Symbol
Values
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Unit Note
Min.
Typ.
Max.
Device Supply Voltage
V_DD
1.7
1.8
1.9
V
Output Supply Voltage
V_DDQ
1.7
1.8
1.9
V
1)
Input Reference Voltage
V_REF
0.49 × V_DDQ
0.5 × V_DDQ
0.51 × V_DDQ
V
2)
SPD Supply Voltage
V_DDSPD
1.7
—
3.6
V
DC Input Logic High
V_IH(DC)
V_REF + 0.125 —
V_DDQ + 0.3
V
DC Input Logic Low
V_{IL (DC})
– 0.30
—
V_REF – 0.125
V
In / Output Leakage Current
I_L
–5
—
5
µA
3)
1) Under all conditions, V_DDQ must be less than or equal to V_DD
2) Peak to peak AC noise on V_REF may not exceed ± 2% V_REF (DC).V_REF is also expected to track noise in V_DDQ.
3) Input voltage for any connector pin under test of 0 V ≤ V_IN ≤ V_DDQ + 0.3 V; all other pins at 0 V. Current is per pin
Rev. 1.12, 2007-10
13
10312006-I253-V1V0