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PS219B2-AS Datasheet, PDF (4/11 Pages) Powerex Power Semiconductors – Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 www.pwrx.com
PS219B2-S, PS219B2-AS, PS219B2-CS
Intellimod™ Module
Dual-In-Line Intelligent Power Module
5 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
PS219B2-S, PS219B2-AS,
PS219B2-CS
Units
Inverter Part
Supply Voltage (Applied between P-NU, NV, NW)
Supply Voltage, Surge (Applied between P-NU, NV, NW)
Collector-Emitter Voltage
Each IGBT Collector Current (TC = 25°C)
Each Peak Collector Current (TC = 25°C, Less than 1ms)
Collector Dissipation (TC = 25°C, per 1 Chip)
Power Device Junction Temperature*1
VCC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
450
500
600
5
10
21.3
-20 ~ +150
Volts
Volts
Volts
Amperes
Amperes
Watts
°C
Control (Protection) Part
Control Supply Voltage (Applied between VP1-VNC, VN1-VNC)
Control Supply Voltage (Applied between VUFB-U, VVFB-V, VWFB-W)
Input Voltage (Applied between UP, VP, WP-VNC, UN, VN, WN-VNC)
Fault Output Supply Voltage (Applied between FO-VNC)
Fault Output Current (Sink Current at FO Terminal)
Current Sensing Input Voltage (Applied between CIN-VNC)
VD
20
Volts
VDB
20
Volts
VIN
-0.5 ~ VD+0.5
Volts
VFO
-0.5 ~ VD+0.5
Volts
IFO
1
mA
VSC
-0.5 ~ VD+0.5
Volts
Total System
Self-protection Supply Voltage Limit, Short Circuit Protection Capability
(VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C, Non-repetitive less than 2µs)
Module Case Operating Temperature*2
Storage Temperature
Isolation Voltage, 60Hz, Sinusoidal 1 Minute, All Connected Pins to Heatsink Plate
VCC(prot.)
TC
Tstg
VISO
400
-20 ~ +100
-40 ~ +125
1500
Volts
°C
°C
Vrms
Thermal Resistance
Junction to Case*3
Rth(j-c)Q
Inverter IGBT Part (Per 1/6 Module)
—
—
4.7
Rth(j-c)D
Inverter FWDi Part (Per 1/6 Module)
—
—
5.4
*1 The maximum junction temperature rating of the power chips integrated within the DIPIPM is 150°C (@TC ≤ 100°C). However, to ensure safe operation of the DIPIPM,
the average junction temperature should be limited to Tj(avg) ≤125°C (@TC ≤ 100°C).
*2 TC measurement point
CONTROL TERMINALS
DIPIPM
°C/Watt
°C/Watt
11.6mm 3.0mm
IGBT CHIP POSITION
FWDi CHIP POSITION
POWER TERMINALS
TC POINT
HEATSINK SIDE
*3 Good thermal grease with long-term quality should be applied evenly with +100µm ~ +200µm on the contacting surface of the DIPIPM and heatsink. The contacting thermal resistance
between DIPIPM case and heatsink (Rth(c-f)) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W
when the grease thickness is 20µm and the thermal conductivity is 1.0W/mK.
4
12/11 Rev. 0