PS219B2-AS Datasheet, PDF (11/11 Pages) Powerex Power Semiconductors – Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 [phone] www.pwrx.com
PS219B2-S, PS219B2-AS, PS219B2-CS
Intellimod™ Module
Dual-In-Line Intelligent Power Module
5 Amperes/600 Volts
Pattern Wiring Around Shunt Resistor
DIPIPM
NU
NV
VNC
NW
NU, NV, NW should be connected near terminals.
Wiring inductance should be less than 10nH.
(Equivalent to the inductance of a copper pattern with
length = 17mm and width = 3mm.)
N1
RSHUNT
GND wiring from VNC should be as
close to the shunt resistors as possible.
External S_C Protection Circuit Using Three Shunt Resistors
DIPIPM
DRIVE CIRCUIT
P
P-SIDE
IGBTs
U
V
W
N-SIDE
IGBTs
VNC
DRIVE CIRCUIT
PROTECTION CIRCUIT
CIN
A
NW
NV
NU
D
C
Rf
Cf
Rf
Cf
Rf
Cf
SHUNT
RESISTORS
B_−
5V
Vref +
−
Vref +
OR OUTPUT
−
Vref +
COMPARATORS
(Open Collector Output Type)
Notes:
1) It is necessary to set the time constraint Rf, Cf of external comparator input so that the IGBT stops within 2μs when short circuit occurs.
SC interrupting time can vary with the wiring pattern, comparator speed and so on.
2) The threshold voltage Vref should be set up as the same rating as the short circuit trip level (VSC(ref), typically 0.48V).
3) Select the external shunt resistance so that the SC trip-level is less than specified value (≤1.7 times current rating).
4) Wiring A, B, and C should be as short as possible to avoid a malfunction.
5) Where the wiring to the comparator is divided, point D, should be near the shunt resistor terminal.
6) OR output high level should be over 0.53V (= maximum VSC(ref)).
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