PSMN8R5-60YS_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

NXP Semiconductors
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
25
R_DSon
(mΩ)
20
V_GS (V) = 5
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5.5
V_DS
I_D
V_GS(pl)
15
6
10
7
8
10
5
0
20
40
60
80
I_D (A)
V_GS(th)
V_GS
Q_GS1
Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 14. Gate charge waveform definitions
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
10
V_GS
(V)
8
6
12 V
V_DS = 30 V
48 V
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4
2
0
0
20
40 _{QG (nC)} 60
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
10⁴
C
(pF)
10³
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C_iss
10²
10^{- 1}
1
C_oss
C_rss
10 _{VDS (V)} 10²
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN8R5-60YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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