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PSMN8R5-60YS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
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NXP Semiconductors
60
gfs
(S)
40
20
003aad794
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
4000
C
(pF)
3000
2000
003aad801
Ciss
Crss
1000
0
0
20
40
60
80
ID (A)
Fig. 5. Forward transconductance as a function of
drain current; typical values
0
0
3
6
9
12
VGS (V)
Fig. 6. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
40
RDSon
(mΩ)
30
20
10
003aad797
80
ID
10 7 6
(A)
60
40
20
003aad795
5.5
5
VGS (V) = 4.5
0
4
8
12
16
20
VGS (V)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
0
0
0.5
1
1.5
2
VDS (V)
Fig. 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
PSMN8R5-60YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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