PSMN8R5-60YS_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

NXP Semiconductors
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
80
I_D
(A)
60
40
20
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T_j = 175 °C
T_j = 25 °C
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
aaa-019191
Min
Typ Max
0
0
2
4 _{VGS (V)} 6
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
10^-6
0
1
2
3
4
5
V_GS (V)
T_j = 25 °C; V_DS = 5V
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
5
V_GS(th)
(V)
4
3
2
1
aaa-019190
2 .4
a
2
Max
1 .6
Typ
1 .2
Min
0 .8
0 .4
003aad696
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
I_D = 1 mA ; V_DS = V_GS
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
0
-6 0
0
60
120
180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature.
PSMN8R5-60YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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