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| PSMN8R5-60YS_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 8 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Symbol
VGS
Ptot
ID
Parameter
gate-source voltage
total power dissipation
drain current
IDM
peak drain current
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 2
VGS = 10 V; Tmb = 25 °C; Fig. 2
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 3
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 76 A;
Vsup ⤠60 V; RGS = 50 Ω; unclamped
120
Pder
(%)
80
03aa16
Min Max Unit
-20 20
V
-
106 W
-
54
A
-
76
A
-
303 A
-55 175 °C
-55 175 °C
-
260 °C
-
76
A
-
303 A
-
97
mJ
40
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a function of mounting base temperature
PSMN8R5-60YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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