PSMN8R5-60YS_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

NXP Semiconductors
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
100
I_D
(A)
80
003aad791
60
40
20
0
0
50
100
150
200
T_mb (°C)
Fig. 2. Continuous drain current as a function of mounting base temperature
10³
I_D
(A)
10²
10
Limit R_DSon = V_DS / I_D
t_p = 10 µs
100 µs
003a a d792
DC
1
1 ms
10 ms
100 ms
10^{- 1}
10^{- 1}
1
10
10²
10³
V_DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
Min Typ Max Unit
-
0.63 1.42 K/W
PSMN8R5-60YS
Product data sheet
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22 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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