PSMN8R5-100PS_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
10
V_GS
(V)
8
6
4
20 V
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80 V
V_DS = 50 V
2
0
0
40
80
120
Q_G (nC)
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 15. Gate charge waveform definitions
12000
C
(pF)
8000
4000
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C_iss
C_rss
10⁴
C
(pF)
10³
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C_iss
C_oss
C_rss
0
0
4
8
12
V_GS (V)
Fig. 16. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
10²
10^-1
1
10
10²
V_DS (V)
Fig. 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN8R5-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
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