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| PSMN8R5-100PS_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 | |||
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NXP Semiconductors
103
IAL
(A)
102
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aak418
(1)
10
(2)
1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
Limit RDSon = VDS / ID
003aak419
tp =10 µ s
100 µ s
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
1
10
102
103
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
-
0.49 0.57 K/W
PSMN8R5-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
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