PSMN8R5-100PS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

NXP Semiconductors
240
I_D
V_GS(V) = 10
6
(A)
180
120
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
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5.5
20
R_DSon
(mΩ)
15
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5
10
60
5
4.5
4
0
0
2
4 _VDS(V) 6
0
0
5
10
15 _VGS(V) 20
Fig. 6.
T_j = 25 °C; t_p = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
120
g_fs
(S)
90
60
30
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250
I_D
(A)
200
150
100
50
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T_j = 175 °C
T_j = 25 °C
0
0
80
160
240
320
400
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
0
0
2
4
6
8
10
V_GS (V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN8R5-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
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