PSMN8R5-100PS_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
5
V_GS(th)
(V)
4
3
003aah027
max
typ
10^-1
I_D
(A)
10^-2
10^-3
003aah028
min
typ max
2
min
10^-4
1
10^-5
0
-60
0
60
120
180
T_j (°C)
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
3
003aag818
25
003aak422
a
R_DSon
(mΩ)
4.5
5
5.5
2.4
20
1.8
15
6
1.2
10
0.6
5
V_GS(V) = 10
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
0
0
80
160
I_D (A) ²⁴⁰
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
PSMN8R5-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
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