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PSMN8R5-100PS_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
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NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Symbol
Parameter
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
[1]
pulsed; tp ≤ 10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
[1] Continious current limited by package.
160
ID
(A)
120
(1)
80
003aak417
120
Pder
(%)
80
40
40
Min Max Unit
-
263 W
-55 175 °C
-55 175 °C
-
260 °C
-
100 A
-
429 A
-
219 mJ
03aa16
0
0
50
100
150
200
Tmb (°C)
(1) Capped at 100A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN8R5-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
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