PSMN4R3-100PS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

NXP Semiconductors
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
7
R_DSon
(mΩ)
V_GS (V) =
6
003aag795
5
5.5
6.0
4
8.0
10.0
3
0
20
40
60
80
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
4
2
80V
50V
V_DS= 20V
003aaf729
10⁵
C
(pF)
10⁴
10³
10²
003aaf730
C_iss
C_oss
C_rss
0
0
50
100
150 _{QG (nC)} 200
10
10^-1
1
10 _VDS(V) 10²
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© NXP B.V. 2011. All rights reserved.
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