PSMN4R3-100PS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

NXP Semiconductors
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
[1] Measured 3 mm from package.
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 50 V
Min Typ Max Unit
-
0.8 1.2 V
-
75
-
ns
-
235 -
nC
250
g_fs
(S)
200
003aaf723
100
I_D
(A)
80
003aaf724
150
60
100
40
50
0
0
30
60
90 _{ID (A)} 120
20
0
0
T_j = 175 °C
T_j = 25 °C
2
4 _VGS(V) 6
Fig 5. Forward transconductance as a function of
drain current; typical values
20
R_DSon
(mΩ)
15
003aag794
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
80
I_D
(A)
60
10.0 6.0 5.5
V_GS (V) =
003aag793
10
40
4.5
5
20
0
0
4
8
12
16
20
V_GS (V)
0
0
0.2
0.4
0.6
0.8
1
V_DS (V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics; drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© NXP B.V. 2011. All rights reserved.
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