PSMN4R3-100PS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

NXP Semiconductors
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
10⁵
C
(pF)
10⁴
10³
003aaf727
C_iss
C_rss
10²
10^-1
1
10 _VGS(V) 10²
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 9. Input and reverse transfer capacitances as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage, typical values
junction temperature
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
2.8
a
2.4
003aaf728
2
1.6
1.2
0.8
0.4
0
-60
0
60
120 _{Tj (°C)} 180
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© NXP B.V. 2011. All rights reserved.
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