PSMN4R3-100PS Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

NXP Semiconductors
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
Source-drain diode
Conditions
Min
T_j ≥ 25 °C; T_j ≤ 175 °C
-
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
-
-20
V_GS = 10 V; T_j = 100 °C; see Figure 1
-
V_GS = 10 V; T_mb = 25 °C; see Figure 1
[1] _-
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; see Figure 3
-
T_mb = 25 °C; see Figure 2
-
-55
-55
-
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
[1] _-
-
E_DS(AL)S
non-repetitive drain-source V_GS = 10 V; T_j(init) = 25 °C; I_D = 120 A;
-
avalanche energy
V_sup ≤ 100 V; R_GS = 50 Ω; Unclamped
[1] Continuous current limited by package
Max Unit
100 V
100 V
20 V
119 A
120 A
673 A
338 W
175 °C
175 °C
260 °C
120 A
673 A
537 mJ
200
I_D
(A)
160
120
(1)
80
40
003aag825
120
P_der
(%)
80
40
03aa16
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© NXP B.V. 2011. All rights reserved.
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