PSMN4R3-100PS Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Rev. 1 — 27 October 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
[1] Continuous current limited by package
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
T_mb = 25 °C; see Figure 2
Min Typ Max Unit
-
-
100 V
[1] _-
-
120 A
-
-
-55 -
338 W
175 °C
V_GS = 10 V; I_D = 25 A; T_j = 100 °C;
see Figure 12
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 13
-
[2] _-
6.6 7.8 mΩ
3.7 4.3 mΩ
V_GS = 10 V; I_D = 75 A; V_DS = 50 V;
-
49
-
nC
see Figure 14; see Figure 15
-
170 -
nC
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 120 A; V_sup ≤ 100 V;
R_GS = 50 Ω; Unclamped
-
-
537 mJ