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PSMN4R3-100PS Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
NXP Semiconductors
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Static characteristics
V(BR)DSS
drain-source breakdown
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
VGS(th)
gate-source threshold
ID = 1 mA; VDS = VGS; Tj = -55 °C;
-
voltage
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
see Figure 11; see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
VDS = 100 V; VGS = 0 V; Tj = 175 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
-
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
[1] -
RG
gate resistance
f = 1 MHz
-
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 50 V; VGS = 10 V; see
-
Figure 14; see Figure 15
QGS
QGS(th)
ID = 0 A; VDS = 0 V; VGS = 10 V
-
gate-source charge
ID = 75 A; VDS = 50 V; VGS = 10 V; see
-
pre-threshold gate-source Figure 14; see Figure 15
-
charge
QGS(th-pl)
post-threshold gate-source
-
charge
QGD
gate-drain charge
-
VGS(pl)
gate-source plateau voltage VDS = 50 V; see Figure 14;
-
see Figure 15
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
-
Tj = 25 °C; see Figure 16
-
reverse transfer capacitance
-
turn-on delay time
rise time
VDS = 50 V; RL = 0.67 Ω; VGS = 10 V;
-
RG(ext) = 4.7 Ω; ID = 75 A; Tj = 25 °C
-
turn-off delay time
-
fall time
-
Typ Max Unit
-
-
V
-
-
V
-
4.6 V
-
-
V
3
4
V
0.08 10 µA
-
500 µA
10
100 nA
10
100 nA
10.4 12
mΩ
6.6 7.8 mΩ
3.7 4.3 mΩ
0.9 -
Ω
170 -
nC
140 -
nC
48
-
nC
31
-
nC
17.3 -
nC
49 -
nC
5.1 -
V
9900 -
pF
660 -
pF
381 -
pF
45
-
ns
91 -
ns
122 -
ns
63 -
ns
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© NXP B.V. 2011. All rights reserved.
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