PSMN3R5-30LL_11 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET

NXP Semiconductors
PSMN3R5-30LL
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
20
R_DSon
(mΩ)
15
003aae147
V_GS (V) = 3
10
3.5
5
4.5
10
0
0
10
20
30
40
I_D (A)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
PSMN3R5-30LL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 December 2011
© NXP B.V. 2011. All rights reserved.
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