PSMN3R5-30LL_11 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET

PSMN3R5-30LL
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
Rev. 4 — 12 December 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product
is designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Small footprint for compact designs
 Suitable for logic level gate drive
sources
1.3 Applications
 Battery protection
 DC-to-DC converters
 Load switching
 Power ORing
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state resistance
Dynamic characteristics
Q_GD
gate-drain charge
Conditions
T_j ≥ 25 °C; T_j ≤ 150 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 10 A; T_j = 100 °C;
see Figure 12
V_GS = 4.5 V; I_D = 10 A; T_j = 25 °C;
see Figure 13
V_GS = 10 V; I_D = 10 A; T_j = 25 °C;
see Figure 13
V_GS = 10 V; I_D = 15 A; V_DS = 15 V;
see Figure 14; see Figure 15
Min Typ Max Unit
-
-
30 V
-
-
40 A
-
-
-55 -
71 W
150 °C
-
-
5
mΩ
-
4.3 5.6 mΩ
-
3
3.6 mΩ
-
5
-
nC