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PSMN3R5-30LL_11 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
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NXP Semiconductors
PSMN3R5-30LL
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
VDS = 15 V; RL = 1 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
IS = 10 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
IS = 15 A; dIS/dt = 100 A/µs;
VGS = 0 V; VDS = 15 V
Min Typ Max Unit
-
23
-
ns
-
54
-
ns
-
35 -
ns
-
18 -
ns
-
0.85 1.2 V
-
37
-
ns
-
34 -
nC
100
gfs
(S)
80
003aae144
60
40
20
0
0
10
20
30
40
50
ID (A)
50
ID
(A)
40
30
20
10
0
0
003aae143
Tj = 150 °C
Tj = 25 °C
1
2
3
4
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN3R5-30LL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 December 2011
© NXP B.V. 2011. All rights reserved.
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