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PSMN3R5-30LL_11 Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
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NXP Semiconductors
PSMN3R5-30LL
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see Figure 4
Min Typ Max Unit
-
1
1.3 K/W
[1] -
53
60
K/W
[1] Rth(j-a) is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
temperature. In practice Rth(j-a) will be determined by the customer’s PCB characteristics
10
Zth(j-mb)
(K/W)
003aae141
1
δ = 0.5
0.2
10−1 0.1
0.05
0.02
single shot
10−2
10−6
10−5
10−4
10−3
10−2
P
δ = tp
T
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN3R5-30LL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 December 2011
© NXP B.V. 2011. All rights reserved.
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