PSMN2R0-60ES_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 60 V 2.2 m standard level MOSFET in I2PAK

NXP Semiconductors
PSMN2R0-60ES
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
10
R_DSon
(mΩ)
8 _{VGS (V) = 4.5}
6
003aaf751
4.8
5.0
4
5.5
6.0
2
10.0
20.0
0
0
50
100
I_D (A) ¹⁵⁰
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
2.4
a
2
003aaf747
1.6
1.2
0.8
0.4
0
-60
0
60
120
180
T_j (°C)
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of gate-source voltage; typical values
PSMN2R0-60ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
9 of 15