PSMN2R0-60ES_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 60 V 2.2 m standard level MOSFET in I2PAK

NXP Semiconductors
PSMN2R0-60ES
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 175 °C
-
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
-
-20
V_GS = 10 V; T_mb = 100 °C; see Figure 1
[1] _-
V_GS = 10 V; T_mb = 25 °C; see Figure 1
[1] _-
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; see Figure 3
-
T_mb = 25 °C; see Figure 2
-
-55
-55
-
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
[1] _-
-
E_DS(AL)S
non-repetitive drain-source V_GS = 10 V; T_j(init) = 25 °C; I_D = 120 A;
-
avalanche energy
V_sup ≤ 60 V; R_GS = 50 Ω; Unclamped
[1] Continuous current limited by package
Max Unit
60 V
60 V
20 V
120 A
120 A
1135 A
338 W
175 °C
175 °C
260 °C
120 A
1135 A
913 mJ
300
I_D
(A)
240
180
003aaf754
120
P_der
(%)
80
03aa16
120
(1)
40
60
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature.
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN2R0-60ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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