PSMN2R0-60ES_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 60 V 2.2 m standard level MOSFET in I2PAK

NXP Semiconductors
PSMN2R0-60ES
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
[1] Measured 3 mm from package.
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 30 V
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 30 V
Min Typ Max Unit
-
0.8 1.2 V
-
57
-
ns
-
80
-
nC
250
g_fs
(S)
200
150
100
50
0
0
003aaf742
30
60
90 _{ID (A)} 120
80
I_D
(A)
60
40
20
0
0
003aaf743
T_j = 175 °C
T_j = 25 °C
2
4 _VGS(V) 6
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN2R0-60ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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