PSMN2R0-60ES_15 Datasheet, PDF (10/15 Pages) NXP Semiconductors – N-channel 60 V 2.2 m standard level MOSFET in I2PAK

NXP Semiconductors
PSMN2R0-60ES
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
10
V_GS
(V)
8
6
48V
30V
V_DS= 12V
4
2
0
0
40
80
003aaf748
120 _{QG (nC)160}
10⁵
C
(pF)
10⁴
10³
10²
10
10^-1
1
003aaf749
C_iss
C_oss
C_rss
10
V_DS(V) ¹⁰²
Fig 15. Gate-source voltage as a function of gate
charge; typical values
200
I_S
(A)
160
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaf750
120
80
40
0
0
T_j = 175 °C
0.3
0.6
T_j = 25 °C
0.9
1.2
V_SD (V)
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN2R0-60ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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