PSMN2R0-60ES_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 60 V 2.2 m standard level MOSFET in I2PAK

PSMN2R0-60ES
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
Rev. 02 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
T_mb = 25 °C; see Figure 2
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 12
V_GS = 10 V; I_D = 25 A;
T_j = 100 °C; see Figure 12;
see Figure 13
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 75 A;
V_DS = 30 V; see Figure 14;
see Figure 15
Avalanche ruggedness
E_DS(AL)S
non-repetitive
V_GS = 10 V; T_j(init) = 25 °C;
drain-source avalanche I_D = 120 A; V_sup ≤ 60 V;
energy
R_GS = 50 Ω; Unclamped
Min Typ Max Unit
-
-
60 V
[1] _-
-
120 A
-
-
-55 -
338 W
175 °C
[2] _-
-
1.8 2.2 mΩ
3 3.5 mΩ
-
32 -
nC
-
137 -
nC
-
-
913 mJ