PSMN2R0-60ES_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 60 V 2.2 m standard level MOSFET in I2PAK

NXP Semiconductors
PSMN2R0-60ES
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
12
R_DSon
(mΩ)
10
8
6
4
2
0
0
003aaf744
5
10
15
20
V_GS (V)
10⁵
C
(pF)
10⁴
10³
003aaf746
C_iss
C_rss
10²
10^-1
1
10 _VGS(V) 10²
Fig 7. Drain-source on-state resistance as a function Fig 8. Input and reverse transfer capacitances as a
of gate-source voltage; typical values
function of gate-source voltage, typical values
200
I_D
8
6
(A)
10
5
150
100
50
003aad674
4.5
V_GS (V) = 4
5
V_GS(th)
(V)
4
3
2
1
003aad280
max
typ
min
0
0
0.5
1
1.5
2
V_DS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 9. Output characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of drain-source voltage; typical values
junction temperature
PSMN2R0-60ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
8 of 15