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| PSMN016-100XS Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A) | |||
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NXP Semiconductors
PSMN016-100XS
N-channel 100V 16 m⦠standard level MOSFET in TO220F (SOT186A)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
10
VGS
(V)
8
6
80V
50V
VDS= 20V
003aag624
4
2
0
0
10
20
30
40
50
QG (nC)
Fig 14. Gate charge waveform definitions
104
C
(pF)
103
003aag626
Ciss
102
10-1
1
Coss
Crss
10
102
VDS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
5000
C
(pF)
4000
003aag646
Ciss
3000
2000
1000
Crss
0
0
4
8
12
16
VGS (V)
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 17. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
PSMN016-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 6 March 2012
© NXP B.V. 2012. All rights reserved.
9 of 14
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