PSMN016-100XS Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)

NXP Semiconductors
PSMN016-100XS
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)
Table 7. Characteristics …continued
Symbol Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 10 A; V_GS = 0 V; T_j = 25 °C
I_S = 10 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 50 V
100
I_D
(A)
80
V_GS(V) = 10 6.0
60
40
20
0
0
1
2
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5.0
4.8
4.6
4.4
3 _VDS(V) 4
40
R_DSon
(mΩ)
30
20
10
0
4
8
Min Typ Max Unit
-
0.8 1.2 V
-
54
-
ns
-
126 -
nC
003aag620
12
16
20
V_GS (V)
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
100
g_fs
(S)
80
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80
I_D
(A)
60
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60
40
40
20
20
T_j = 175 °C
T_j = 25 °C
0
0
20
40
60 _{ID (A)} 80
0
0
2
4
6
V_GS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN016-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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