PSMN016-100XS Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)

PSMN016-100XS
N-channel 100V 16 mΩ standard level MOSFET in TO220F
(SOT186A)
Rev. 4 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Isolated package
 Suitable for standard level gate drive
1.3 Applications
 AC-to-DC power supply equipment
 Motor control
 Server power supplies
 Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
Static characteristics
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; see Figure 2
R_DSon
drain-source on-state resistance V_GS = 10 V; I_D = 10 A; T_j = 25 °C;
see Figure 12; see Figure 13
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
V_GS = 10 V; I_D = 10 A; V_DS = 50 V;
see Figure 14; see Figure 15
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 32.1 A;
V_sup ≤ 100 V; unclamped; R_GS = 50 Ω;
see Figure 3
Min Typ Max Unit
-
-
100 V
-
-
32.1 A
-
-
46.1 W
-
13
16
mΩ
-
14.2 -
nC
-
46.2 -
nC
-
-
138 mJ